Global GaN Power Device Market size is expected to reach US$ XX Mn. by 2026 from US$ XX Mn. in 2019, at a CAGR of 30.9% during the forecast period.
Global GaN Power Device Market Introduction and Market scenario:
Gallium nitride (GaN) transistors have developed as an improved performance substitute of silicon-based transistors, because of their ability to fabricate more compact devices for a given resistance value and breakdown voltage as compared to silicon devices. These power devices can manage very low resistance and high-frequency switching. These properties are exploited in high-efficiency power supplies, electric vehicle (EV), hybrid electric vehicle (HEV), photovoltaic inverters, and RF switching. Likewise, increased application such as power supplies for server, IT equipment, high-efficiency & stable power supplies and EV & HEV devices are contributing to the growth of the market.
Also, the decrease in prices of GaN devices, rise in demand for GaN devices for wireless charging, increase in installation of GaN devices in electric vehicle, and surge in requirement of GaN devices for commercial RF applications are other main factors which are supporting to the growth of the global market. Additionally, government initiatives in HVDC and smart grid are expected to generate lucrative opportunities for the market growth during the forecast period (2020-2026).
On the other hand, lack of availability of GaN material, solid competition from silicon carbide power devices, and reduction in their prices of silicon-based power, devices are the major restraining factors for the market growth. Also, complexity in manufacturing GaN semiconductor devices, and lack of GaN semiconductor professionals are some of the major challenges faced by GaN power device market.
In June 2019, Oxford Instruments Plasma Technology announced the launch of their plasma atomic layer deposition (ALD) high-volume manufacturing solution Atomfab for their GaN power device. This new launch will help to reduce the cost per wafer and will enable numerous technical innovations which also include patent-pending fast remote plasma source. This will also provide many benefits to GaN device by reducing CoO, also improve the yield and film quality.
COVID-19 scenarios:
The increase in storage demand from data centers, thanks to remote working boosted the growth of the GaN power device market. Also, the supporting sectors including healthcare and medical devices, and telecommunications drive the market growth during the COVID-19 pandemic.
Global GaN Power Device Market Segment Overview:
By vertical, the telecommunication sector dominated the GaN power devices market and is expected to retain its steady position during the forecast period. Thanks to the several applications in this industry such as power supply for telecom, AC fast charger Lidar ET & wireless power, and data centers. The high energy efficiency achieved through the use of GaN power devices acts as the key driver for the high adoption of GaN power devices. Also, there has been substantial R&D conducted across the globe resulting in technological advancement in the GaN power devices to explore gallium nitride (GaN) to its full potential. For example, Massachusetts Institute of Technology’s (MIT) spinout company, Cambridge Electronics Inc. (CEI), has developed an array of GaN transistors & power electronic circuits that target at reducing 10 to 20% of the global energy consumption in data centers, consumer devices, and electric cars by 2026.
Global GaN Power Device Market
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Global GaN Power Device Market Regional Insights:
North America is dominating the GaN power device market and is expected to hold its continuous position during the forecast period (2020-2026). Thanks to the government initiatives for the production of GaN power devices in North America. For instance, according to the department of energy, the US launched a Power America program, which set a goal that by 2030, XX% of all the U.S. electricity will flow through power electronics. To achieve this goal, Power America will work to make wide bandgap semiconductors such as GaN. Also, the existence of a majority of the key players in North America such as Efficient Power Conversion (U.S.), GaN Systems (Canada), Texas Instruments (U.S.), and Cree Inc. (U.S.) among others.
Global GaN Power Device Market Regional Insights
The Asia Pacific is expected to hold the largest market share of the global market for GaN power devices by 2026. The top countries in Asia Pacific such as South Korea, Taiwan, China, and Japan are the productive investment destinations in the Asia Pacific GaN power device market. Because of the increase in the production of the electric vehicle, as per expect that gallium nitride (GaN) based inverters would soon replace silicon power semiconductor devices that are used in electric vehicles. Furthermore, the Asia Pacific GaN the power market is also supported by the existence of major key players such as Taiwan Semiconductor Manufacturing Company (Taiwan), Panasonic Corporation (Japan), Fujitsu (Japan), Toshiba Corporation (Japan), and Mitsubishi Chemical Corporation (Japan) among others.
The report focuses on the GaN power device market value at the top regions and countries of the world, which shows a regional development, including market size, share, revenue, and much more across the globe. The report has covered, capacity, production value, cost/profit, and supply/demand by statistical analysis.
A brief analysis of drivers, restraints, opportunities, and challenges in the market is also covered with examples by region. To make the most of the opportunities, market vendors should focus more on the growth prospects in the fast-growing segments, while maintaining their positions in the slow-growing segments. It also has covered the analysis of key player’s growth strategies, micro and macro analysis of markets, key developments, and key trends in the market.
Global GaN Power Device Market Scope: Inquire before buying
Global GaN Power Device Market
Global GaN Power Device Market, by Region
• North America
• Europe
• Asia Pacific
• Middle East & Africa
• South America
Global GaN Power Device Market Key Players
• CREE
• Infineon
• Qorvo
• Macom
• Microsemi
• Mitsubishi Electric
• Efficient Power Conversion
• GaN Systems
• Navitas Semiconductor
• Toshiba
• Fujitsu Limited
• Panasonic Corporation
• VisIC
• Texas Instruments Inc.
• Taiwan Semiconductor Manufacturing Company
• IQE
• Koninklijke Philips N.V.
• Sumitomo Electric Industries Ltd.
• Exagan
• Integra Technologies, Inc.
• Transphorm Inc.
• GaNpower
• Analog Devices, Inc.
• Ampleon
• Northrop Grumman Corporation
• Dialog Semiconductor
• Others
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